1 documents found
Information × Registration Number 0224U032903, (0124U003607) , R & D reports Title Plasmonic light trapping for highly efficient thin films solar cells popup.stage_title Розроблення та дослідження процесів формування Cu наночастинок, особливостей реалізації локального поверхневого плазмонного резонансу та cтворення сонячних елементів з плівками SiOx(Si, Me) та SixOyNz(Si, Me) для ефективного плазмонного та діелектричного захоплення світла. Head Yevtukh Anatolii A., д.ф.-м.н. Registration Date 10-12-2024 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The main goal of this project is the research and development of thin-film photoelectric converters with plasmonic trapping of light by highly doped silicon nanocrystals and metal nanocrystals and the creation of highly efficient and cheap solar cells. The main original ideas and characteristic features of this project are: 1) the use of cheap Al and/or Cu metal nanocrystals instead of Au and Ag traditionally used in plasmonics, which is very important for the large-scale production of solar cells; 2) the use of highly doped silicon nanocrystals to increase the absorption of the infrared part of the solar spectrum due to the realization of localized surface plasmon resonance; 3) the use of SiOx(Si, Me), SixOyNz(Si, Me) nanocomposite films containing silicon and metal nanocrystals in oxide and oxynitride matrices as an anti-reflective light trapping coating, which will provide imultaneous plasmonic and dielectric light capture; 4) use of pulsed laser technologies to prevent blurring of the boundaries of the constituent ultrathin layers of the structures inherent in traditional isothermal annealing. popup.description2  The goal of this project is to research and develop thin-film photovoltaic converters with plasmonic light capture by heavily doped silicon nanocrystals and metal nanocrystals to create highly efficient and cheap solar cells. At this stage, the processes of ultrathin copper films and copper nanoparticles formation on the surface of the silicon substrate, technologies for formation of nanocomposite SiOx(Si, Cu) and SixOyNz(Si, Cu) films with silicon and copper nanocrystals, structural and optical properties of nanocomposite films, and the creation of solar cells with SiOx(Si, Cu) and SixOyNz(Si, Cu) films and ultrathin copper films and copper nanoparticles on their surface were researched and developed. As a result of this work, the technology for obtaining of nanocomposite SiOx(Si, Cu) and SixOyNz(Si, Cu) films with silicon and copper nanocrystals by ion-plasma sputtering was developed. The presence of copper and copper oxide nanocrystals in the composite film was established by X-ray diffraction. Annealing of the initial sample at the temperature of 400°C leads to the decrease in the intensity of Cu reflexes, which indicates the decrease in the size of Cu nanoparticles. The technology for obtaining of ultrathin (d = 15 – 40 nm) copper films by thermal evaporation was developed. The effect of plasmon-polariton resonance in thin copper films was revealed by the modulation polarimetry method. Resonant interaction with radiation is most clearly observed at the wavelength of 650 nm. It has been established that the deposition of the thin copper film on the surface of the solar cell and subsequent annealing at T = 450 С leads to the significant increase in its efficiency due to the significant (1.5 times) increase in the short-circuit current as a result of light scattering by Cu nanoparticles and the implementation of the effect of localized surface plasmon resonance. Product Description popup.authors Yevtukh Anatolii A. Bratus Oleh L. Fedorenko Leonid L. popup.nrat_date 2024-12-10 Close
R & D report
1
Head: Yevtukh Anatolii A.. Plasmonic light trapping for highly efficient thin films solar cells. (popup.stage: Розроблення та дослідження процесів формування Cu наночастинок, особливостей реалізації локального поверхневого плазмонного резонансу та cтворення сонячних елементів з плівками SiOx(Si, Me) та SixOyNz(Si, Me) для ефективного плазмонного та діелектричного захоплення світла.). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U032903
1 documents found

Updated: 2026-03-17