Registration Number
0224U033554,
(0122U000932)
, R & D reports
Title
Mechanisms of structural relaxation and defect formation in heterosystems, thin films and nanocomposite materials
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Механізми структурної релаксації та дефектоутворення в гетеросистемах, тонких плівках і нанокомпозитних матеріалах
Head
Fodchuk Ihor M., д.ф.-м.н.
Registration Date
30-12-2024
Organization
Yuriy Fedkovych Chernivtsi National University
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The aim of the work is to develop new methods of non-destructive structural-sensitive X-ray diffractometry and probe microscopy for diagnosis and study of structural changes in complex crystalline solid solutions, thin films and multilayer nanoscale systems, as well as in near-surface layers.
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In this project, the concept of experimental and theoretical methods for non-destructive X-ray diagnostics of X-ray scattering processes in structurally complex heterosystems based on cadmium telluride, chalcogenide systems, ultradisperse nickel hydroxide compounds, molybdenum oxides and sulfides, and carbon nanomaterials has been developed at a new level, since, at present, the field of application of such objects occupies an important place in modern semiconductor device manufacturing due to their extraordinary properties, in high-power electrochemical devices, photodetectors, solar cells, filters for the infrared region of the spectrum, X- and γ-radiation detectors, photorefractive materials for optical memory and information processing systems.
The obtained results allow to significantly supplement the basic provisions of the generalized dynamic theory of scattering of X-rays and electrons by structural defects in complex crystalline compounds. The modified methods, algorithms and created software for computer modeling of X-ray scattering processes by complex heterogeneous compounds will open up fundamentally new opportunities for obtaining spectrally selective information about structural disorder and the nature of structural changes in the defective system depending on the physicochemical conditions of their obtaining, and therefore are original and correspond to the world level.
Product Description
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Balovsiak Serhii V.
Hutsuliak Ivan I.
Kotsiubynskyi Volodymyr O.
Lytvyn Petro M.
Litvinchuk Ivan V.
Solodkyi Mykola S.
Fochuk Petro M.
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2024-12-30
