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Information × Registration Number 0225U000483, (0123U104827) , R & D reports Title Hybrid nanostructures based on ferromagnets, antiferromagnets and superconductors with controlled exchange interaction for the latest spintronics and magnonics popup.stage_title Розробка фізичних основ створення гібридних наноструктур на основі феромагнетиків, антиферомагнетиків і надпровідників з керованим надпровідним ефектом близкості та міжшаровою обмінною взаємодією Head Dzhezheria Yurii I., Доктор фізико-математичних наукKravets Anatolii F., Доктор фізико-математичних наук Registration Date 13-01-2025 Organization Institute of Magnetism NAS of Ukraine and MES of Ukraine popup.description1 The purpose of research within the project is to clarify the nature of the superconducting effect of proximity at the interface between a ferromagnet and a superconductor and at the interface between an antiferromagnet and a superconductor and to assess the contribution of this effect to the formation of magnetic ordering and the abrupt change in the magnitude of magnetic anisotropy in multilayer nanostructures. popup.description2  The effective magnetic field induced in flat metallic nanoscale synthetic antiferromagnets (SAF) of elliptical shape under the action of a circularly polarized laser radiation pulse has been calculated, and it has been shown that this effect can be used to activate the processes of controlling the magnetization states of the SAF. The processes of laser generation of a magnetic field can be effectively enhanced by resonant excitation of plasma oscillations in the SAF layers. A method of relaxation-free switching of the magnetic state of a memory cell by a combined pulse of a magnetic field and a spin-polarized current with time dependencies of a special form has been developed. It has been shown that the magnetic field effectively transfers the magnetization of the cell to a state with the greatest susceptibility to the action of a spin-polarized current, which makes the magnetization reversal process as controllable as possible and reduces the harmful effects of thermal fluctuations. The optimal ratio of the field signal amplitude and spin-polarized current to ensure the regime of high-speed relaxation-free switching of magnetic states of the memory cell has been found. It has been shown that yttrium iron garnet (YIG) films grown on gadolinium gallium garnet (GGG) substrates are affected by stray fields that arise in partially magnetized paramagnetic GGG at low temperatures and under the action of external magnetic fields. The strength and configuration of these fields depend on the shape of the GGG substrate and are very heterogeneous across the entire YIG layer. Taking into account this geometric behavior, it is possible to change the shape of the substrate and, thus, keep the magnetic field uniform over the surface area, for example, in quantum magnetic circuits based on YIG/GGG structures. Product Description popup.authors Verba Roman V. Ihor V. Herasymchuk Holud Volodymyr O Zamorskyi Vladislav O. Kalyta Viktor M. Kozlov Oleksii V. Pavlo Y. Polynchuk Skyrta Yurii B. Cherepov Serhii V. popup.nrat_date 2025-01-13 Close