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Information × Registration Number 0225U003003, (0118U004536) , R & D reports Title Automation of electrophysical parameters resarch semiconductor device structures popup.stage_title Автоматизація дослідження електрофізичних параметрів напівпровідникових приладових структур. Head Когут Ігор Тимофійович, Registration Date 01-05-2025 Organization Kolomyia Educational-Scientific Institute The Vasyl Stefanyk Precarpathian National University popup.description1 popup.description2  The methods of measuring the current-voltage characteristics of semiconductor devices were analyzed and generalized. Their main classification features were identified and a classification was compiled, using which the most effective methods of measuring the IVC were determined from the point of view of the criteria formulated in the work (the duration of the measurement process and the degree of its automation, as well as the intensity of self-heating of semiconductor structures during measurement x). The features were considered and an automated complex was developed for studying the electrophysical parameters of semiconductor structures. It was shown that the scope of application of the developed system is not limited only to the study of thermoelectric materials, and thanks to the developed test element - the hollotron, it makes it possible to measure the concentration and mobility of charge carriers in the technological cycle of forming semiconductor structures based on GaAs and to conduct electrophysical diagnostics of their reliability. Product Description popup.authors Ambroziak Andrii I. Holota Volodymyr I. Hryha Volodymyr M. Dzundza Bohdan S. Kohut Ihor T. Kotyk Mykhailo V. Mandziuk Volodymyr I. Stebliak Oleh M. popup.nrat_date 2025-05-01 Close