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Information × Registration Number 0299U000718, 0196U022602 , R & D reports Title The study of the process of carbon films, doped with nitrogen, formation and growth under conditions of ion beam deposition popup.stage_title Head Semenov O.V., Registration Date 14-07-1999 Organization Department of Optical and Constructional Crystals of STC <Institute for Single Crystals> popup.description2 Studied and determined were conditions for the preparation of doped diamondlike films ta-CNx with high content of nitrogen (to 60%) under conditions of ion-plasma deposition. Determined were the conditions of deposition of high adhesion, hard ta-CN films on substrates of optical material at low temperatures (not >60 C). It was found that in highly doped DLF the nitrogen atoms have a weak effect on the structure and near order Sp3-areas and are located preferentially in the neighbouring to Sp3-phase regions. In the process of deposition nitrogen effects the formation of a certain Sp3-phase modification. The main characteristics: growth rate of ta-CN film ~ 5mkm/h; maximum N content in the carbon film C/N=0.7; thickness of high adgesion hard ta-CN film is 0.3mkm. These investigations can be used in the microelectron instrument making for the development of protection for optical and electron elements. Field of application-instrument making industry. Product Description popup.authors popup.nrat_date 2020-04-03 Close