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Information × Registration Number 0299U001723, 0198U002754 , R & D reports Title Development X-ray-diffractional of methods both research of structure and borders of the unit of semi-conductor crystals popup.stage_title Head Raranskyj N.D., Registration Date 14-12-1999 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Object of research: crystals Si the ambassador ionic implantation that of Cd1-x Hgx Te/CdTe the ambassador ionic of etching. The purpose of work: development X-ray-diffractional of methods and experimental equipment, prefixes, and also interface and software for structural diagnostics of crystals. Methods of research: one and bi-crystal x-ray diffractometer, topography, and also basic equations of the dynamic theory of dispersion of x-ray beams by ideal and real crystals. The used equipment: installations DRON -3, URT -1, COMPUTER. Results: are carried out complex X-ray-diffractional of research of structural changes in at-surface layers of a crystal of silicon with implantation of ions of phosphorus with energy 180 КеВ and doze of the order 10 in 15 degrees an ion / с. in sq. The borders amorphism, meanings of the maximal deformations and slowness of area elastic of deformations are certain. The possible sizes and concentration dislocation of loops before and after annealing are appreciated. In the circuit slantwise-skewed diffraction the polishing action of etching by ions of mercury of structures Cd1-x Hgx Te/CdTe in an atmosphere argon of plasma and selective - in conditions decaying high-frequency of the mercury category is investigated. The original prefix to standard x-ray installations for realization of topographical researches is developed and approbation. Sphere of use: diagnostics of semi-conductor materials. Product Description popup.authors popup.nrat_date 2020-04-03 Close