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Information × Registration Number 0302U005215, 0100U003269 , R & D reports Title The study for the micro- and nanoelectronics purposes of secondary emission, adsorption and radiation processes under the bombardment of solids by medium energy ions popup.stage_title Вивчення впливу кисню на енергетичні спектри вторинних іонів і ймовірності іонізації частинок, розпилених з поверхні металів з різною щільністю електронних станів Head Koval' A.G., Registration Date 22-04-2002 Organization Kharkov National University named after V.N.Karazin popup.description2 Materials with various electronic structure: semiconductors of A3B5 group, including solid solutions of A3B5 compounds — were the objects of research. The aim of the work was receiving of data on process of oxygen adsorption on a surface of complex (three-four components) semiconductors of A3B5 group; investigation by thermodesorption spectrometry of processes of uptaking and release of deuterium implanted in semiconductors GaAs and GaP by medium energy D2+ ions bombardment. Research methods were mass-spectrometry of secondary ions and thermodesorption mass-spectrometry. Systematic studies of processes of an oxygen adsorption on surfaces of complex semiconductors were carried out. It was established, that significant oxygen adsorption activity characterized Al0.35Ga0.65As semiconductor. There is appreciable amount of oxygen on a surface even at T = 875 K and oxygen pressure 2x10-6 Pa. At that only AlAs interacts with oxygen, GaAs which is also the part of Al0.35Ga0.65As semiconductor, does not interacts with oxygen up to the temperature 875 K and oxygen pressure 10 (-3) Pa. Adsorption characteristics of In0.88Ga0.12As0.35P0.65 semiconductor are similar to those of InP. The formation of radiating defects in gallium arsenide and phosphide, irradiated by medium energy D2+ ions, was investigated. It has been established, that matrix intrinsic defects and implanted bombarding beam particles (alloying impurity) accumulate in samples. The interaction between them with the formation of complexes that at the further postradiating heating may transform releasing deuterium particles is possible. The released deuterium particles migrate through a sample bulk up to a surface and then desorb in vacuum. The results of research are able to be used at the creation of new materials with the given properties; for further clearing out of the general mechanisms of gases adsorption and the uniform theory of these processes creation; and also in diagnostics of solids at an atomic level; in science of constructional materials. Product Description popup.authors popup.nrat_date 2020-04-02 Close