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Information × Registration Number 0303U003171, 0102U000329 , R & D reports Title Development of the technology of homogeneous crystals growth, alloying and study of electric and photoelectric properties of the solid solutions semiconductors system of CdZnTe growth by sublimation popup.stage_title Пошук оптимальних умов вирощування менш дефектних напівпровідників CdTe-ZnTe та дослідження їх фізичних властивостей Head Tsmots' V.M., Registration Date 18-02-2003 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The metod of investigation is statistic analysis of electric characteristics of the the grown crystals at various temperatures of charge and the gradient of temperatures at the crystalization front. Basic results are as follows: we got the energy spectrum of defects on samples of ZnxCd1-xTe, their change of temperature in the process of conservation and low-temperature heating in vapours of Zn and Cd. Thermal heafing of samples of ZnxCd1-xTe in vapours of H2 enables us to get samples of high resistivity dul to passivation of centres of low activation energies. ZnxCd1-xTe grown in the atmosphere of H2 is somewhat more stable. The conditions of growth of ZnxCd1-xTe with more homogeneous distribution of defects are obtained. The possibility of making high ohmie crystals of ZnxCd1-xTe by doping with H2 is shown. Physics of semiconductors Product Description popup.authors popup.nrat_date 2020-04-02 Close