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Information × Registration Number 0304U002269, 0104U002469 , R & D reports Title The development of a four-element radial-sector p-i-n photodiode for low-pover supply systems (Uop = 2 V) popup.stage_title Розробка конструкторської та технологічної документації. Виготовлення дослідних зразків ФД. Проведення попередніх випробувань, Приймання ДКР. Head Ryukhtin Vyacheslav V., Registration Date 15-03-2004 Organization RHYTHM OPTOELECTRONICS Inc popup.description2 In activity the possibility of using p-i-n ФД, made from монокрис- таллического of silicon with specific resistance more than 10000 Ohm х см, in systems of a low-voltage feed (Up = 2 В) is shown. The calculation of an optimum design of a chip for detecting of infrared(infra-red) radiation with a wavelength 1,06 microns is carried out at frequency modulation up to 20 кГц. The calculations of a capability of realization of an optimum level of a photo є Лектрических of parameters are conducted. The researches ФД, measurement of photo-electric parameters, test for effect of the mechanical and climatic factors of an environment, test for minimum operating time are circumscribed. The technological parameters of the developed photo diode УФД14М are adduced. Product Description popup.authors popup.nrat_date 2020-04-02 Close