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Information × Registration Number 0305U001257, 0104U000893 , R & D reports Title The investigation of processes of degradation of semi-conductor solid solutions CdxZn1-xTe popup.stage_title Вирощування нелегованих і легованих кристалів CdxZn1-xTe методом сублімації Head Peleshchak R.M., Registration Date 31-01-2005 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The semiconductors such as CdTe and CdxZn1-xTe have alredy found their application in electronics. So the technology of producing these materials with minimal concentration of native defects is important. The purpose of the work is to study the influence of heat tretment temperature on the defective structure in CdxZn1-xTe and the possibility of passivation of shollow defects by hydrogen. The research techniques are the investigation of electrofisical properties in the temperature range of 77 - 300 K and the statistical analysis of electrical characteristics of grown crystals. The main results are the modification of CdxZn1-xTe growth technology and obtaining the energy scheme of defects. From the photoluminescence spectra CdxZn1-xTe crystals grown by charge, synthesized in hydrogen, are less defective. Physics of semiconductors. Product Description popup.authors popup.nrat_date 2020-04-02 Close