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Information × Registration Number 0311U012059, 0111U005780 , R & D reports Title Investigation of mesa structure of Si high voltage microwave pin diodes with SiC protection against temperature and humidity influence. popup.stage_title Дослідження меза-структур кремнієвих високовольтних НВЧ pіn діодів з захистом SіC в умовах впливу температури та вологості. Head Boltovets N., Registration Date 21-12-2011 Organization State Scientific-Reseach Institute "Orion" popup.description2 Investigation of volt-ampere and volt-farad characteristics of mesa-structures of silicon high-voltage microwave p-і-n diodes with i-region thickness of 200 microns with protected surface is carried out in temperatures 20-200 gr.С.. It is shown, that break-down voltage of diodes at temperature 20 gr.С and a reverse current 20 мА is equal 700 V. With temperature increasing from 20 gr.С to 200 gr.С break-down voltage decreases up to 350 V. For decreasing leakage currents and increasing break-down voltage of the diodes, it is necessary to provide resistivity of SіC protected layer not less than 10(8) Ohm.cm. Product Description popup.authors В,І. Миколаєнко В.А. Кривуца В.Г. Ноєнко Л.М. Суворова М.С Болтовець Н.М. Андрієнко Н.Я. Урицька О.С. Слєпова Т.І. Голинна Т.В. Коростинська Т.М. Ледєньова popup.nrat_date 2020-04-02 Close