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Information × Registration Number 2111U000213, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/10573 popup.publisher Видавництво СумДУ Description A new thin-film silicon photovoltaic cell could be designed by inserting quantum well layers in the intrinsic region. Calculations show the improvement in spectral absorption due to the quantum well layer insertion. This article reports the design parameters and enhanced spectral absorption for a newly designed thin-film silicon quantum well photovoltaic cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/10573 popup.nrat_date 2025-03-24 Close