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Інформація × Реєстраційний номер 2111U000253, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Designing single chamber hwcvd system for high deposition rate device quality A-Si:h thin films and solar cells Автор Дата публікації 01-01-2011 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/27890 Видання Видавництво СумДУ Опис A new single chamber HWCVD with vertically mounted substrates and filaments has been designed for depositing device quality a-Si:H films with high deposition rate. Optimization studies on films deposited in this chamber under a variety of deposition conditions yielded uniform films at more than 7Å/sec deposition rate and with very low oxygen content. These films show a photoconductivity gain of more than 105. The working pressure has been kept quite low at 15 mtorr compared to earlier studies. i-layers of a p-i-n single junction solar cells were deposited on the TCO (Asahi-U type) glass in this reactor. The initial p-layer and the final n-layer were deposited in another system with separate chambers for these doped layers thus exposing the p-layer as well as the i-layer to the atmosphere during the transfer. Using this optimized intrinsic layer, a-Si:H based p-i-n solar cell showed a conversion efficiency of 4.7 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27890 Додано в НРАТ 2025-03-24 Закрити