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Information × Registration Number 2111U001322, Article popup.category Thesis Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/20860 popup.publisher Видавництво СумДУ Description The use of compression flows (CPF) for the formation of metal and silicide nanostructures for data storage devices, thermoelectric materials and solar cells is presented. The action of CPF with injected metallic powder results in the formation of coatings composed of spherical clusters with complex structure: each submicron cluster (0,1-0,2 μm radius) is formed from a number of nanosized ones (10-25 nm radius). The action of CPF on binary “metal-silicon” systems provides formation of branched silicon dendrites (tip radius ~ 200 nm, primary spacing ~ 1,2 μm); interdendritic space is filled with nanostructured (50-100 nm) “silicide-silicon” and “monosilicide-disilicide” composite due to melting of the surface layer, rapid solidification (~ 10-3 m/s) and constitutional overcooling. Mechanisms of formation of nanostructured composites on silicon surface and in thick surface layers is discussed in terms of order parameter evolution and non-equilibrium solidification models. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20860 popup.nrat_date 2025-05-12 Close
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: published. 2011-01-01; Сумський державний університет, 2111U001322
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Updated: 2026-03-21