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Information × Registration Number 2111U001360, Article popup.category Thesis Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/20559 popup.publisher Sumy State University Description HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM). For RRAM development a clear understanding of switching mechanisms from a HRS to a LRS is demanding. Several models were proposed to explain the switching effect [1-3], however, they did not cover comprehensively experimental observations. It is experimentally shown by means of high resolution transmission electron microscopy that formation of CFs with diameters of 30-50 nm in HfO2 occurred by an electrical pretreatment [2]. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20559 popup.nrat_date 2025-05-12 Close