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Інформація × Реєстраційний номер 2112U001416, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Design and Fabrication Heterojunction Solarcell of Si-CdS-ZnO Thin Film Автор Дата публікації 01-01-2012 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/35487 Видання Sumy State University Опис Cadmium sulphide (CdS) is a prominent candidate to be used a buffer layer in Si based solar cell. In this study, absorber layer parameters thickness have been investigated by (SCAPS) to find out the higher conversion. Moreover, it is found that Jsc,Voc, η is increased for the absorber layer thickness of 500-600 nm and quantum efficiency is nearly overlap after the 600 nm thickness of the Si absorber layer. In addition, it is revealed that the highest efficiency cell can be achieved with the absorber layer thickness of 600 nm. From the simulation results, numerous influences of absorber layer are investigated in Si/CdS/ZnO solar cell which can lead to the fabrication of high efficiency devices. Experimentally the designed cell fabricated and the electrical properties measured also Jsc ,Voc ( with lower values) as Si thickness increased until 600 nm. And best efficiency value calculated was 8.9%. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35487 Додано в НРАТ 2025-05-12 Закрити