Search academic texts

Information × Registration Number 2112U001468, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35166 popup.publisher Sumy State University Description The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166 popup.nrat_date 2025-05-12 Close