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Інформація × Реєстраційний номер 2112U001471, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Analysis of the Electronic and Band-Structure in As-grown and Annealed (Ga,Mn)As Epitaxial Layers Автор Дата публікації 01-01-2012 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/34993 Видання Sumy State University Опис The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We investigated (Ga,Mn)As layers and, as a reference, undoped GaAs layer, grown by LT-MBE on semi-insulating (001) GaAs substrates. Photoreflectance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the (Ga,Mn)As films were characterized with a superconducting quantum interference device (SQUID) magnetometer. In addition, we investigated impact of the annealing of 100 nm (Ga,Mn)As layers with 6% of the Mn content on the electronic and band structure as well as on the electrical and magnetic properties of these films. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34993 Додано в НРАТ 2025-05-12 Закрити