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Information × Registration Number 2113U000971, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/31003 popup.publisher Сумський державний університет Description Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control. In this paper we have investigated the control of the interfacial properties of SiO2 / Ge gate stack structures by the thermal nitridation technique. Structural and electrical properties of SiO2 gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering on germanium are studied. The structural characterization confirmed that the thin film was free of physical defects and smooth surface of the films after PDA at 500 °C in N2 ambient. The smooth surface SiO2 thin films were used for Pt / SiO2 / GeON / Ge MOS structures fabrication. The MOS structure yields a low leakage current density of 9.16 × 10 – 6Acm – 2 at 1 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31003 popup.nrat_date 2025-03-24 Close