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Інформація × Реєстраційний номер 2113U001897, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane Автор Дата публікації 01-01-2013 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/35320 Видання Sumy State University Опис Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using native precursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all the films were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-N bonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa, respectively. The optimum deposition parameters were established. The films can be recommended as hard coatings for strengthening cutting tools. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35320 Додано в НРАТ 2025-05-12 Закрити