Інформація × Реєстраційний номер 2114U000774, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Influence of electron irradiation on optical properties of ZnSe thin films Автор Дата публікації 01-01-2014 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/38420 Видання Sumy State University Опис Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of optical energy at 550 nm wavelength. The samples irradiated 800 Gy tends to redeem the pristine properties. Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV. Додано в НРАТ 2025-03-24 Закрити