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Інформація × Реєстраційний номер 2115U000535, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Heterostructure Active Area Optimization by Simulation Автор Дата публікації 01-01-2015 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/43238 Видання Sumy State University Опис Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects. Додано в НРАТ 2025-03-24 Закрити