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Інформація × Реєстраційний номер 2115U000732, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Initiation of Polarized State in the Tantalum Oxide Thin Films Grown by Magnetron Sputtering on a Substrate of Monocrystalline Silicon (100) Followed by Argon and Oxygen Ions Автор Дата публікації 01-01-2015 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/44542 Видання Sumy State University Опис The pictures of the induced state and the surface potential distribution in thin films of tantalum oxide produced by magnetron sputtering onto a substrate of monocrystalline silicon (100) followed by low energy argon and oxygen ions was investigated by atomic force microscopy in spreading resistance and scanning Kelvin probe microscopy mode. It was shown that it is possible to polarize or depolarize the coating, and then to visualize the state of the induced polarization using an electric field applied via the conductive cantilever in contact spreading resistance microscopy mode. It was found that treatment with argon ions increases the contrast of the of the surface potential distribution maps from 1.2 V to 2,3 V for negative – 10 V voltage on the probe and from 9,6 V to 19,2 V for a positive + 10 V voltage in comparison with the oxygen ions. Додано в НРАТ 2025-03-24 Закрити