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Інформація × Реєстраційний номер 2115U001917, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices Автор Дата публікації 01-01-2015 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/42647 Видання Sumy State University Опис The self-organized quantum dot (QD) formation in InGaAs/GaAs superlattices grown by molecular beam epitaxy was investigated by the high-resolution X-ray diffraction technique. The investigated samples had the identical structure consisting of fifteen periods of {InxGa1−xAs (8 ML)/GaAs (26 ML)} with the nominal In concentration x = 0.2. The diffraction profiles and reciprocal lattice maps for these samples have been measured at symmetrical (004) reflection by using the triple-crystal X-ray diffractometer. The analysis of the measured data was performed by using the proposed diffraction model based on the statistical theory of dynamical X-ray scattering in imperfect single crystals and multilayer structures. Додано в НРАТ 2025-05-12 Закрити
Матеріали
Thesis
Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices
Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices : публікація 2015-01-01; Сумський державний університет, 2115U001917
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Оновлено: 2026-03-16


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