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Information × Registration Number 2117U001461, Article popup.category Стаття Title popup.author popup.publication 01-01-2017 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/65782 popup.publisher Sumy State University Description In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area electronics, compatible with Si CMOS process and can be managed by external illumination. popup.nrat_date 2025-03-24 Close