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Інформація × Реєстраційний номер 2117U001553, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Resistive Switching Properties of Highly Transparent SnO[2]:Fe Автор Дата публікації 01-01-2017 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/65788 Видання Sumy State University Опис Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 • 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the nonvolatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface. Додано в НРАТ 2025-03-24 Закрити