Знайдено документів: 1
Інформація × Реєстраційний номер 2118U001424, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Gunn Diodes Based on Graded InGaP-InPAs Автор Дата публікації 01-01-2018 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/70911 Видання Sumy State University Опис Nowadays, graded semiconductors attract developers' interest as prospective material which can improve the interaction of the electric field and the electrons in the devices operating on the intervalley electron transfer effect. This effect increases the efficiency and power output of the generation of current oscillations in Gunn diodes. To obtain the best effect graded semiconductor must be optimal by the dependence of the energy gap between the nonequivalent valleys of the conduction band on the coordinate. This paper deals with the results of the investigation of Gunn diodes operation based on graded InGaP-InPAs by means of the temperature model of intervalley electron transfer in graded semiconductors. The paper presents the results of the numerical experiments on efficient generation of electromagnetic waves in the range from 18 to 80 GHz using graded InxGa1 – xP-InPyAs1 – y Gunn diodes with the active region length of 2.5 m and concentration of ionized impurities therein of 1016 cm – 3. Our findings are the dependences generation efficiency and output power on frequency for different distributions of GaP and InAs in InxGa1 – xP-InPyAs1 – y. We have compared obtained results with similar AlxGa1 – xAs-GaAs-Ga1 – yInyAs-diodes. The maximal obtained power in InxGa1 – xP-InPyAs1 – y-diode is 11.3 kW-cm – 2 at a frequency of 40 GHz with an efficiency of 10.2 % at x = 0.6 and y = 0.6. Додано в НРАТ 2025-03-24 Закрити
Матеріали
Стаття
Gunn Diodes Based on Graded InGaP-InPAs
Gunn Diodes Based on Graded InGaP-InPAs : публікація 2018-01-01; Сумський державний університет, 2118U001424
Знайдено документів: 1

Оновлено: 2026-04-08


Роздрукувати цю сторінку