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Інформація × Реєстраційний номер 2120U001384, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films Автор Дата публікації 01-01-2020 Постачальник інформації Сумський державний університет Першоджерело https://essuir.sumdu.edu.ua/handle/123456789/77390 Видання Sumy State University Опис The Cu2O thin film was developed using an electrodeposition approach for resistive memory application. The impact of the deposition voltage (1V, 2V, 3V, and 4V) on resistive switching (RS)/memristive properties of Cu2O thin films was studied. The XRD spectrum reveals that deposited Cu2O has a cubic crystal structure. The bipolar RS in Al/Cu2O/FTO device was clearly observed during the current-voltage (I-V) measurement. The basic memristive properties were calculated from I-V data. The charge transport studies suggested that the SCLC mechanism was responsible for device conduction, and RS was due to filamentary effect. The result suggested that the electrodeposition technique is useful to fabricate a memristive device for various applications. Додано в НРАТ 2025-03-24 Закрити