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Інформація × Реєстраційний номер 2120U001700, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices Автор Дата публікації 01-01-2020 Постачальник інформації Сумський державний університет Першоджерело https://essuir.sumdu.edu.ua/handle/123456789/77355 Видання Sumy State University Опис In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices. Додано в НРАТ 2025-03-24 Закрити