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Інформація × Реєстраційний номер 2111U001360, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Thermal reversible breakdown and resistivityswitching in hafnium dioxide Автор Дата публікації 01-01-2011 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/20559 Видання Sumy State University Опис HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM). For RRAM development a clear understanding of switching mechanisms from a HRS to a LRS is demanding. Several models were proposed to explain the switching effect [1-3], however, they did not cover comprehensively experimental observations. It is experimentally shown by means of high resolution transmission electron microscopy that formation of CFs with diameters of 30-50 nm in HfO2 occurred by an electrical pretreatment [2]. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20559 Додано в НРАТ 2025-05-12 Закрити