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Head: Bieliaiev Oleksandr Ye.. Semiconductor materials with nanostructured surfaces for new means of communication, infrared vision and information technologies. (popup.stage: Напівпровідникові матеріали з наноструктурованими поверхнями для нових засобів зв’язку, інфрачервоного бачення та інформаційних технологій). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U001247

Head: Mamykin Serhii V.. Development and implementation of a dust-insensitive smoke sensor based on a plasmon-polariton photodetector. (popup.stage: Виготовлення, тестування та впровадження датчика диму на основі ППФД). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U033020

Head: Melnyk Viktor P.. Creation of basic technologies for the formation of semiconductor materials and structures for Nano - and optoelectronics. (popup.stage: Створення базових технологій формування напівпровідникових матеріалів і структур для нано- та оптоелектроніки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U002739

Head: Mamykin Serhii V.. Development and implementation of a dust-insensitive smoke sensor based on a plasmon-polariton photodetector. (popup.stage: Розробка і виготовлення оптимізованих ППФД та електронної схеми їх підключення з контролем температури). V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine. № 0224U000264

Head: Bieliaiev Oleksandr Ye.. New plasmonic and phonon phenomena and technologies for nano- and optoelectronic devices. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0223U001414

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief". (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U002223

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief". VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0122U000791

Head: Danko Viktor A.. "New plasmonic nanomaterials based on laterally-ordered structures of noble metals for precise, rapid analysis of macromolecular compounds by spectroscopy of surface-enhanced Raman light scattering". Stage 2: Production of experimental samples of substrates with clarified characteristics of nanocavities and study of their morphological and optical characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U101544

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U100360

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics.. V. Lashkaryov Institute of semiconductor physics. № 0120U102292