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Head: Bieliaiev Oleksandr Ye.. New plasmonic and phonon phenomena and technologies for nano- and optoelectronic devices. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0223U001414

Head: Belyaev Oleksandr Ye.. Search and creation of advanced semiconductor materials and functional structures for nano- and optoelectronics. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U001900

Sumaryuk Alexander V.. High-strength composites based on silica and aluminosilicate modifiers and methods of their diagnosis : Кандидат фізико-математичних наук : spec.. 01.04.07 - Фізика твердого тіла : presented. 2021-12-17; popup.evolution: .; Yuriy Fedkovych Chernivtsi National University. – Чернівці, 0421U104047.

Head: Kladko Vasyl Petrovych. Development of thecnological processes and manufacturing of InSb photodiod structures. (popup.stage: ). Institute of Semiconductor Physics. № 0218U005168

Head: Kladko Vasyl Petrovych. Development of thecnological processes and manufacturing of InSb photodiod structures. (popup.stage: ). Institute of Semiconductor Physics. № 0218U005167

Head: Kladko Vasyl Petrovych. ISP-2017/1. (popup.stage: ). Institute of Semiconductor Physics. № 0218U002299

Head: Kladko Vasyl Petrovych. Development and creation of high-resolution X-ray methods and equipment for certification of nanomaterials. (popup.stage: ). Institute of Semiconductor Physics. № 0218U003441

Head: Kladko Vasyl Petrovych. Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. № 0216U001911

Head: Kladko Vasyl Petrovych. Development and creation of high-resolution X-ray methods and equipment for certification of nanomaterials. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0216U001745

Head: Kladko Vasyl Petrovych. Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. № 0216U007050