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Head: Venger Yevgen F.. Physical and chemical phenomena in semiconductors, carbon nanocomposites and heterostructures, the impact on their manufacturing technology and external influences. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U102481

Head: Konakova Raisa Vasil'evna, Kudryk Yaroslav Yaroslavovich. Development and design of diagnostic complex for testing microwave diodes based on wide bandgap semiconductors. (popup.stage: ). Institute of Semiconductor Physics. № 0218U002545

Okhrimenko Olga Borisovna. Modification of the physical properties of structures oxide/ silicon carbide. : д.ф.-м.н. : spec.. 01.04.07 - Фізика твердого тіла : presented. 2016-09-07; popup.evolution: .; Institute of Semiconductor Physics. – , 0516U000696.

Vynohradov Anatolij Olehovych. Сharge transport mechanisms in ohmic contacts to silicon microwave diodes : к.ф.-м.н. : spec.. 01.04.01 - Фізика приладів, елементів і систем : presented. 2015-04-08; popup.evolution: .; Institute of Semiconductor Physics. – , 0415U001766.

Head: Konakova Raisa Vasiljevna, Vlasenko Alexandr. Development of methods for the study of contact systems of powerful light-emitting diodes using N(III) heterostructures with elements from third group. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0215U000609

Head: Konakova Raisa. Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U007139

Head: Konakova Raisa Vasiljevna, Vlasenko Alexandr. Development of methods for the study of contact systems of powerful light-emitting diodes using N(III) heterostructures with elements from third group. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0214U005471

Head: Konakova Raisa Vasil'evna. Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0214U005449

Head: Konakova Raisa Vasilevna. Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors.. (popup.stage: ). V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0214U008831

Head: Konakova Raisa Vasilevna. Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors.. (popup.stage: ). V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0214U008830