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13 documents found
R & D report
Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy
Head: Belyaev Alexander. Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0214U001867
R & D report
Development of AlInGaAsP based heterostructures with active nanolayers for red and orange high efficient LEDs by MOCVD technology and their manufacturing application.
Head: Krukovsky Semen Ivanovych. Development of AlInGaAsP based heterostructures with active nanolayers for red and orange high efficient LEDs by MOCVD technology and their manufacturing application.. (popup.stage: ). Scientific Research Company "Carat". № 0214U003348
R & D report
"Investigation of forming peculiarities of new generation cascade heterostructures based on complex nitrogen-containing compounds A3B5 by MOCVD"
Head: Krukovsky Semen Ivanovych. "Investigation of forming peculiarities of new generation cascade heterostructures based on complex nitrogen-containing compounds A3B5 by MOCVD". (popup.stage: ). Scientific Research Company "Carat". № 0214U003347
R & D report
Modeling and optimization of tunnel junctions with a giant manetoresistance
Head: Novikov Evgeniy. Modeling and optimization of tunnel junctions with a giant manetoresistance. (popup.stage: ). State scientific research centre "Fonon". № 0214U003346
R & D report
Development of molecular nanopellet forms of medications for solving the problem of vitaminization of population.
Head: Larkin Sergey. Development of molecular nanopellet forms of medications for solving the problem of vitaminization of population.. (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0214U002240
R & D report
The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt
Head: Krukovskii Semen. The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt. (popup.stage: Розроблення технологій виробництва гетероепітаксійних квантоворозмірних світлодіодних структур на основі InGaN/GaN/Al2O3 методом газофазної епітаксії з металоорганічних сполук з енергетичною ефективністю більш як 80 Лм/Вт). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0314U004020
R & D report
Application of basic technologies of production of semiconductor heteroepitaxial structures with nanodimension elements on the base of solid solutions A3B5 for photoelectronic devices on unit MOCVD D-180GaN
Head: Krukovskiy Semen. Application of basic technologies of production of semiconductor heteroepitaxial structures with nanodimension elements on the base of solid solutions A3B5 for photoelectronic devices on unit MOCVD D-180GaN. (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0214U001195
R & D report
Development of systems of multilevel logic using the effect of electromigration of vacancies in nanosized systems.
Head: Permyakov Vitaly. Development of systems of multilevel logic using the effect of electromigration of vacancies in nanosized systems.. (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0214U002150
R & D report
The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt.
Head: Krukovskii Semen Ivanovich. The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt.. (popup.stage: Розроблення технологій виробництва гетероепітаксіальних квантоворозмірних світлодіодних структур на основі InGaN/GaN/Al2O3 методом газофазної епітаксії з металоорганічних сполук з енергетичною ефективністю більш як 60 Лм/Вт). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0313U005017
R & D report
"Investigation of forming peculiarities of new generation cascade heterostructures based on complex nitrogen-containing compounds A3B5 by MOCVD"
Head: Krukovsky Semen Ivanovych. "Investigation of forming peculiarities of new generation cascade heterostructures based on complex nitrogen-containing compounds A3B5 by MOCVD". (popup.stage: ). Scientific Research Company "Carat". № 0213U001718
13 documents found

Updated: 2026-10-28


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